In3As
ceramic· JVASP-39253· In3As
Indium arsenide (InAs) is a III-V compound semiconductor ceramic with a direct bandgap, commonly used in optoelectronic and high-frequency electronic devices. Its narrow bandgap and high electron mobility make it particularly valuable for infrared detectors, high-speed transistors, and quantum well structures where performance at low temperatures or high frequencies is critical. InAs is also explored in emerging applications such as quantum dots and topological materials research, where its unique electronic properties enable novel device architectures not achievable with conventional semiconductors.
infrared detectors and sensorshigh-electron-mobility transistors (HEMTs)quantum dot materialshigh-frequency integrated circuitsoptoelectronic devicescryogenic electronics
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2428 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 20.81 | µV/K | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1756 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.06694 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.