In₃Sb₁ is an indium antimonide compound semiconductor belonging to the III-V semiconductor family, characterized by a narrow bandgap that makes it particularly responsive to infrared radiation. This material is primarily investigated for infrared detection and sensing applications, where its sensitivity to mid- and far-infrared wavelengths offers advantages over wider-bandgap alternatives; it is also explored for high-speed optoelectronic devices and quantum applications. While less commercially established than binary InSb, In₃Sb₁ represents research-phase development within the indium antimonide material system, targeting specialized imaging and detection systems where narrow-bandgap performance is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00920 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01800 | eV/atom | — |