In3 Ge1

semiconductor

· In3 Ge1

In₃Ge₁ is an intermetallic compound belonging to the III-V semiconductor family, composed of indium and germanium in a 3:1 stoichiometric ratio. This material is primarily of research interest for advanced optoelectronic and thermoelectric applications, where its narrow bandgap and high carrier mobility make it potentially valuable for infrared detection, photovoltaic devices, and solid-state cooling systems. While not yet widely commercialized compared to established III-V compounds like GaAs or InP, In₃Ge₁ represents an emerging candidate for next-generation devices operating in specialized wavelength ranges where conventional semiconductors reach performance limits.

infrared photodetectorsnarrow-bandgap photovoltaicsthermoelectric coolershigh-frequency electronicsresearch optoelectronicsspace/cryogenic sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00160	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1190	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In3 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control