In3 As1
semiconductor· In3 As1
InAs (indium arsenide) is a III-V compound semiconductor with a narrow direct bandgap, belonging to the family of binary arsenide materials used in optoelectronic and high-frequency devices. It is primarily employed in infrared detectors, thermal imaging systems, and high-electron-mobility transistors (HEMTs) where its exceptional carrier mobility and sensitivity in the mid-to-long-wavelength infrared region provide advantages over silicon-based alternatives. InAs is also used in quantum-well structures and as a substrate material in advanced epitaxial device fabrication.
infrared photodetectorsthermal imaging sensorshigh-frequency transistorsquantum well devicesheterojunction structuresspace/military sensing systems
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.