In3 As1

InAs (indium arsenide) is a III-V compound semiconductor with a narrow direct bandgap, belonging to the family of binary arsenide materials used in optoelectronic and high-frequency devices. It is primarily employed in infrared detectors, thermal imaging systems, and high-electron-mobility transistors (HEMTs) where its exceptional carrier mobility and sensitivity in the mid-to-long-wavelength infrared region provide advantages over silicon-based alternatives. InAs is also used in quantum-well structures and as a substrate material in advanced epitaxial device fabrication.