In₂TeAs is a ternary semiconductor ceramic compound combining indium, tellurium, and arsenic elements, belonging to the family of III-V and mixed-anion semiconductors. This material exists primarily in research and development contexts, where it is explored for optoelectronic and photonic applications that exploit the bandgap and carrier transport properties of indium-based semiconductor systems. Its potential relevance lies in specialized detector, infrared sensing, or photovoltaic device architectures where the specific composition offers tunable electronic characteristics compared to binary alternatives like InAs or InTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1818 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1408 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1219 | eV/atom | — |