In₂Se is a layered III-VI semiconductor compound composed of indium and selenium, belonging to the family of van der Waals materials with a naturally layered crystal structure. Currently primarily investigated in research and development contexts, In₂Se shows promise for next-generation optoelectronic and electronic devices due to its tunable bandgap, ferroelectric properties, and strong light-matter interactions. Engineers consider In₂Se for applications requiring thin-film devices, nonlinear optical response, or integration into heterogeneous semiconductor stacks where its layered nature enables mechanical exfoliation or epitaxial growth.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.42 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 12.83 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.767 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.6900 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3126 | eV/atom | — |