Indium sulfide (In₂S₃) is a III-VI semiconductor compound with a direct bandgap, suitable for optoelectronic and photovoltaic applications. It appears primarily in research and emerging technology contexts rather than mature industrial production, where it is investigated for thin-film solar cells, photodetectors, and window layers in heterojunction devices due to its tunable bandgap and favorable optical properties compared to conventional alternatives like CdS.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.104 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.000 | eV | — | ||
| ↳ | 0.6860 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.74 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.6600 | C/m² | — | ||
Seebeck Coefficient(S) | -30.83 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01750 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.7371 | eV/atom | — | ||
| ↳ | -0.5845 | eV/atom | — |