In2S3 — Properties & Data | MatWorld

In2S3

Name: In2S3
Brand: MatWorld

semiconductor

· In2S3

Indium sulfide (In₂S₃) is a III-VI semiconductor compound with a direct bandgap, suitable for optoelectronic and photovoltaic applications. It appears primarily in research and emerging technology contexts rather than mature industrial production, where it is investigated for thin-film solar cells, photodetectors, and window layers in heterojunction devices due to its tunable bandgap and favorable optical properties compared to conventional alternatives like CdS.

thin-film photovoltaicswindow layers for solar cellsphotodetectors and UV sensingoptoelectronic researchemerging semiconductor technologiesheterojunction device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.104	kg/m³	DFT · OptB88vdW

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.000	eV	Measured
↳	0.2640	eV	DFT · OptB88vdW
↳	1.476	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	13.74	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	10.36	-	DFT · OptB88vdW
↳	6.311	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.01000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.01000	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.6600	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000170	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00212	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-30.83	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	333.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	32.65	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.01750	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.5845	eV/atom	DFT · OptB88vdW
↳	-0.7371	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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In2S3

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