In₂N₃F is an indium nitride fluoride ceramic compound combining indium nitride with fluorine substitution or incorporation. This is a research-phase material within the wider family of III-V nitride semiconductors and advanced ceramics, studied for potential applications requiring thermal stability and wide bandgap properties. While not yet widely deployed in commercial production, indium nitride-based compounds represent an active research area for next-generation semiconductor devices and high-performance ceramic applications where conventional materials reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 108.7 | GPa | — | ||
Shear Modulus(G) | 22.45 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.607 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 3.502 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.538 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.9181 | eV/atom | — |