In2HgTe4 — Properties & Data | MatWorld

In2HgTe4

ceramic

· In2HgTe4

In2HgTe4 is a quaternary semiconductor ceramic compound belonging to the II-VI semiconductor family, combining indium, mercury, and tellurium elements. This material is primarily investigated in research contexts for infrared detection and optoelectronic applications, where its narrow bandgap and high atomic number elements enable sensitivity in the mid- to far-infrared spectrum. Engineers consider this compound for specialized sensing and thermal imaging systems where conventional semiconductors are insufficient, though it remains less mature than established alternatives like HgCdTe and requires careful handling due to mercury toxicity.

infrared detectorsthermal imaging sensorsresearch optoelectronicssemiconductor devicescryogenic applicationsspectroscopy systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	2,874.8	ksi	DFT
Shear Modulus(G)	1,759.1	ksi	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2234	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.4040	eV	DFT · OptB88vdW
↳	1.349	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	24.16	-	DFT · OptB88vdW
↳	18.23 range 16.20–20.25median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	15.87	-	DFT · OptB88vdW
↳	8.904	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.09000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.4433	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.5982	C/m²	DFT · OptB88vdW
↳	0.06826	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000886	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00257	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-84.31	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	247.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.94	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2213	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2HgTe4

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental