In2HgTe4 is a quaternary semiconductor ceramic compound belonging to the II-VI semiconductor family, combining indium, mercury, and tellurium elements. This material is primarily investigated in research contexts for infrared detection and optoelectronic applications, where its narrow bandgap and high atomic number elements enable sensitivity in the mid- to far-infrared spectrum. Engineers consider this compound for specialized sensing and thermal imaging systems where conventional semiconductors are insufficient, though it remains less mature than established alternatives like HgCdTe and requires careful handling due to mercury toxicity.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,874.8 | ksi | — | ||
Shear Modulus(G) | 1,759.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2234 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4040 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 24.16 | - | — | ||
| ↳ | 18.23 range 16.20–20.25median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.06826 | C/m² | — | ||
| ↳ | 0.5982 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -84.31 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2213 | eV/atom | — |