In2HgS4 is a quaternary semiconductor compound combining indium, mercury, and sulfur, belonging to the class of ternary and quaternary chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its bandgap and optical properties may enable detection or energy conversion in specialized wavelength ranges. The mercury-containing composition presents both processing challenges and potential advantages in infrared or thermal imaging systems, though it remains less established in commercial production compared to binary (such as CdS) or ternary (such as CdZnS) alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1999 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.000 | eV | — | ||
| ↳ | 0.2890 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -29.85 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4686 | eV/atom | — |