In2HgS4 — Properties & Data | MatWorld

In2HgS4

Name: In2HgS4
Brand: MatWorld

semiconductor

· In2HgS4

In2HgS4 is a quaternary semiconductor compound combining indium, mercury, and sulfur, belonging to the class of ternary and quaternary chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its bandgap and optical properties may enable detection or energy conversion in specialized wavelength ranges. The mercury-containing composition presents both processing challenges and potential advantages in infrared or thermal imaging systems, though it remains less established in commercial production compared to binary (such as CdS) or ternary (such as CdZnS) alternatives.

infrared detectorsphotovoltaic researchoptoelectronic devicesnarrow-bandgap semiconductorsmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1999	lb/in³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.2890	eV	DFT · OptB88vdW
↳	1.492	eV	DFT · TBmBJ
↳	2.000	eV	Measured
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	10.18	-	DFT · OptB88vdW
↳	1.047	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.01000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.01000	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000146	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00187	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-29.85	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	356.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	32.41	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4686	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2HgS4

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