In2GeTe3 — Properties & Data | MatWorld

In2GeTe3

Name: In2GeTe3
Brand: MatWorld

semiconductor

· In2GeTe3

In2GeTe3 is a ternary chalcogenide semiconductor compound composed of indium, germanium, and tellurium. This material belongs to the family of narrow-bandgap semiconductors and is primarily investigated in research contexts for thermoelectric and infrared optoelectronic applications, where its layered crystal structure and tunable electronic properties offer potential advantages over binary semiconductors in specific temperature and spectral regimes.

thermoelectric cooling and power generationinfrared detectors and sensorsnarrow-bandgap semiconductor researchsolid-state electronics developmentthermal management materialsphotovoltaic device engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	Measured

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2GeTe3

Electrical Properties

Regulatory Screening

Environmental

Export Control