In₂GaS₄ is a ternary chalcogenide ceramic compound combining indium, gallium, and sulfur, belonging to the family of III-VI semiconducting ceramics. This material is primarily investigated in research contexts for optoelectronic and photonic device applications, where its direct bandgap and crystal structure make it a candidate for light emission, detection, and nonlinear optical functions. Engineers consider In₂GaS₄ as an alternative to more established III-V semiconductors when tunable bandgap energy, thermal stability in specific temperature windows, or integration with other chalcogenide layers is required, though it remains largely confined to laboratory development rather than high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1488 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.09930 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5520 | eV/atom | — |