In2GaAs3
ceramic· JVASP-108773· In2GaAs3
In₂GaAs₃ is an indium gallium arsenide compound semiconductor belonging to the III-V ceramic family, formed from indium, gallium, and arsenic elements. This material is primarily of research and specialized optoelectronic interest, with potential applications in high-speed transistors, infrared detectors, and photovoltaic devices where its bandgap and carrier mobility properties may offer advantages over conventional binary compounds. Engineers would consider this ternary compound when designing next-generation semiconductors requiring specific lattice-matching or performance characteristics in space, military, or high-frequency communication systems.
high-frequency semiconductor devicesinfrared photodetectorsspace optoelectronicsintegrated photonicsresearch compound semiconductors
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — median of 2 measurements | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.