In2GaAs3

ceramic

· JVASP-108773· In2GaAs3

In₂GaAs₃ is an indium gallium arsenide compound semiconductor belonging to the III-V ceramic family, formed from indium, gallium, and arsenic elements. This material is primarily of research and specialized optoelectronic interest, with potential applications in high-speed transistors, infrared detectors, and photovoltaic devices where its bandgap and carrier mobility properties may offer advantages over conventional binary compounds. Engineers would consider this ternary compound when designing next-generation semiconductors requiring specific lattice-matching or performance characteristics in space, military, or high-frequency communication systems.

high-frequency semiconductor devicesinfrared photodetectorsspace optoelectronicsintegrated photonicsresearch compound semiconductors

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1906	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2265 range 0.000–0.4530median of 2 measurements	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00730	eV/atom	—
Formation Energy(ΔHf)	-0.2456	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2GaAs3

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental