In₂GaAs₃ is an indium gallium arsenide compound semiconductor belonging to the III-V ceramic family, formed from indium, gallium, and arsenic elements. This material is primarily of research and specialized optoelectronic interest, with potential applications in high-speed transistors, infrared detectors, and photovoltaic devices where its bandgap and carrier mobility properties may offer advantages over conventional binary compounds. Engineers would consider this ternary compound when designing next-generation semiconductors requiring specific lattice-matching or performance characteristics in space, military, or high-frequency communication systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.276 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.4530 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 16.09 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 12.75 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00730 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2456 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data