In₂CuO₄ is an ternary oxide ceramic compound containing indium, copper, and oxygen, belonging to the mixed-metal oxide family. This material is primarily of research and experimental interest rather than established in high-volume industrial production; it is studied for potential applications in semiconducting devices, catalysis, and electronic materials where the combined properties of indium and copper oxides may offer advantages in charge transport or chemical reactivity. Engineers considering this material should recognize it as an emerging compound whose performance characteristics and manufacturing maturity differ significantly from conventional ceramic engineering materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.158 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -23.83 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2194 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.206 | eV/atom | — |