In2Bi3Se7I

semiconductor

· In2Bi3Se7I

In2Bi3Se7I is a quaternary chalcohalide semiconductor compound combining indium, bismuth, selenium, and iodine in a layered crystal structure. This is a research-stage material studied for its potential as a narrow-bandgap semiconductor with interesting optoelectronic and thermoelectric properties, part of the broader family of bismuth chalcohalides being investigated as alternatives to lead-based compounds in photovoltaics and IR detection. The material represents exploratory work in non-toxic, earth-abundant semiconductors that could enable new applications in mid-infrared sensing and solid-state energy conversion if synthetic and processing challenges can be overcome.

infrared detectors and sensorsphotovoltaic absorber layersthermoelectric devicesoptoelectronic researchlead-free semiconductor alternativesemerging materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.380	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2Bi3Se7I

Electrical Properties

Regulatory Screening

Environmental

Export Control