In₂AsSe is a ternary III-V semiconductor ceramic compound combining indium, arsenic, and selenium. It belongs to the family of narrow-bandgap semiconductors and is primarily of research and development interest rather than a widely commercialized material. This compound is investigated for infrared optoelectronics and photonic applications where its unique electronic and optical properties offer potential advantages over binary semiconductors like InAs or InSe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,662.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.4300 | - | — | ||
Shear Modulus(G) | 877.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1775 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1196 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2395 | eV/atom | — |