In2AgSe3Br is a mixed-halide semiconductor compound combining indium, silver, selenium, and bromine elements. This material belongs to the family of ternary and quaternary chalcohalides, which are primarily of research interest for their tunable optoelectronic properties and potential applications in next-generation photovoltaic and photodetection devices. As an experimental compound, In2AgSe3Br represents ongoing materials exploration in solid-state chemistry where compositional engineering is used to optimize band gaps, carrier mobility, and stability for energy conversion and sensing applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.651 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02800 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 10.16 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5058 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data