In₂Ag₂GeS₆ is a quaternary chalcogenide compound belonging to the metal sulfide family, combining indium, silver, germanium, and sulfur elements. This material is primarily of research and developmental interest for photonic and optoelectronic applications, where its sulfide matrix and mixed-metal composition offer potential for nonlinear optical properties, infrared transmission, and semiconductor behavior. While not yet established in high-volume industrial production, compounds in this material class are being investigated for mid-infrared optical devices, photovoltaic systems, and specialized detector applications where the combination of heavy metal cations and chalcogen anions provides tunable electronic and optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.541 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8100 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4345 | eV/atom | — |