In2 Zn1 S4

semiconductor

· In2 Zn1 S4

In₂Zn₁S₄ is a quaternary semiconductor compound combining indium, zinc, and sulfur in a specific stoichiometric ratio, belonging to the family of III-VI semiconductors. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its tunable bandgap and semiconductor properties offer potential advantages over binary or ternary alternatives for light emission, detection, or energy conversion. Engineers consider such mixed-cation sulfide semiconductors when designing wide-bandgap devices or exploring cost-reduction strategies through partial substitution of more expensive elements like pure indium compounds.

research photovoltaicswide-bandgap semiconductorsoptoelectronic devicesthin-film solar cellsphotodetectorsmaterials substitution strategies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1896	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6360	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 Zn1 S4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control