In2 Sn4 I10

semiconductor

· In2 Sn4 I10

In₂Sn₄I₁₀ is an indium tin iodide semiconductor compound, part of the halide perovskite and post-perovskite material families. This is primarily a research-phase material explored for its potential in optoelectronic and photovoltaic applications, where the layered halide structure and indirect bandgap characteristics offer tunable electronic properties. The material represents an emerging direction in halide semiconductor chemistry, competing with lead-based perovskites and traditional III-V semiconductors by offering potential advantages in stability, processability, and environmental safety, though it remains largely in development stages compared to commercialized alternatives.

emerging photovoltaicshalide semiconductor researchoptoelectronic devicesthin-film electronicslead-free alternativesexperimental solar cells

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	2,491.5	ksi	—
Shear Modulus(G)	1,405	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.485	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5250	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 Sn4 I10

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control