In2Sn2Br6 is a halide perovskite semiconductor compound combining indium, tin, and bromine, belonging to the emerging class of metal halide semiconductors under investigation for optoelectronic applications. This material is primarily a research compound studied for potential use in next-generation photovoltaic devices, light-emitting applications, and radiation detection, where its bandgap and electronic properties may offer advantages over conventional silicon or CdTe semiconductors. The tin-indium combination provides a lead-free alternative pathway within the halide perovskite family, addressing toxicity concerns while maintaining semiconducting functionality relevant to thin-film device architectures.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,551.1 | ksi | — | ||
Shear Modulus(G) | 387.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.312 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7660 | eV/atom | — |