In2 Si2 Te6

semiconductor

· In2 Si2 Te6

In₂Si₂Te₆ is a ternary semiconductor compound combining indium, silicon, and tellurium—a layered chalcogenide material belonging to the broader family of III-IV-VI semiconductors. This is primarily a research compound studied for its potential in thermoelectric, optoelectronic, and photovoltaic applications, where the combination of elements offers tunable band gap and carrier transport properties. While not yet widely deployed in commercial products, materials in this compositional space are investigated for next-generation energy conversion devices and infrared detectors due to their favorable thermal and electronic characteristics relative to binary alternatives.

thermoelectric energy conversioninfrared detectionphotovoltaic researchoptoelectronic devicessolid-state cooling systemsmaterials research and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	4,156.2	ksi	—
Shear Modulus(G)	2,334.1	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1173	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1940	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 Si2 Te6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control