In₂Se₄Zn₁ is a ternary semiconductor compound combining indium, selenium, and zinc—elements commonly used in optoelectronic and photovoltaic device engineering. This material belongs to the family of III-VI semiconductors and represents an experimental composition likely explored for bandgap engineering, where the zinc dopant modifies electronic properties compared to binary indium selenide. Research compounds of this type are investigated for thin-film solar cells, photodetectors, and integrated photonic devices where tunable bandgap and controllable electrical conductivity offer advantages over single-element or binary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,073.1 | ksi | — | ||
Shear Modulus(G) | 2,936.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8091 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5910 | eV/atom | — |