In₂Se₃ is a III-VI layered semiconductor compound composed of indium and selenium, belonging to the family of van der Waals materials with a naturally layered crystal structure. It is primarily investigated in research and emerging device applications for its tunable band gap, strong light-matter interactions, and potential for integration into flexible and transparent electronics. The material is notably under development for next-generation photovoltaic devices, photodetectors, and field-effect transistors where its layered structure enables both high performance and mechanical flexibility compared to conventional bulk semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,384.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,673.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1922 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4800 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data