In2 Sb4 Se8 Br2
semiconductorIn₂Sb₄Se₈Br₂ is a mixed-halide chalcogenide semiconductor compound combining indium, antimony, selenium, and bromine in a layered crystal structure. This is a research-phase material within the broader family of halide perovskites and chalcogenide semiconductors, of interest for optoelectronic and photovoltaic applications where bandgap engineering and layer-dependent properties are valuable. The incorporation of bromine as a halide dopant alongside chalcogenide elements offers tunable electronic properties relative to purely selenide or sulfide analogs, making it a candidate for next-generation thin-film photovoltaics, IR detectors, and solid-state lighting where material composition control directly enables performance optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |