In₂Sb₄S₈Br₂ is a mixed-halide chalcogenide semiconductor compound combining indium, antimony, sulfur, and bromine. This is a research-stage material belonging to the family of layered semiconductors with potential for optoelectronic and photovoltaic applications, currently explored for its tunable bandgap and anisotropic crystal structure rather than established commercial use. The bromide substitution in the sulfide lattice offers a route to engineer electronic and optical properties for next-generation thin-film devices, though the material remains primarily in academic investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.549 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4980 | eV/atom | — |