In₂Sb₂ is a III-V semiconductor compound composed of indium and antimony, belonging to the family of narrow bandgap materials explored for infrared and optoelectronic applications. This material is primarily of research and developmental interest rather than established high-volume production, with potential applications in infrared detectors, thermal imaging systems, and specialized photonic devices where its electronic band structure offers advantages over conventional alternatives like InSb or InAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.60 | GPa | — | ||
Shear Modulus(G) | 20.88 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.00700 | eV/atom | — |