In₂S₅Zn₂ is a quaternary semiconductor compound combining indium, sulfur, and zinc—materials commonly explored for optoelectronic and photovoltaic applications. This is a research-stage material belonging to the III–VI semiconductor family, investigated for potential use in thin-film solar cells, photodetectors, and light-emitting devices where bandgap engineering and earth-abundant element substitution are priorities. Its appeal lies in combining indium's favorable electronic properties with zinc's lower cost and toxicity profile, though industrial adoption remains limited compared to established alternatives like CIGS or CdTe solar absorbers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09310 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6690 | eV/atom | — |