In2 P2 H4 O10

semiconductor

· In2 P2 H4 O10

In₂P₂H₄O₁₀ is an indium phosphide-based semiconductor compound containing hydrated oxygen and hydrogen species, representing a research-phase material within the III-V semiconductor family. This compound and related indium phosphide derivatives are investigated for optoelectronic and photovoltaic applications where direct bandgap semiconductors enable efficient light emission and detection, though this specific hydrated phase remains primarily in experimental development rather than established commercial production.

experimental optoelectronicsphotovoltaic researchIII-V semiconductorslight-emitting devicesphotodetector developmentmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	67.29	GPa	—
Shear Modulus(G)	45.43	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.667	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.752	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 P2 H4 O10

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control