Indium nitride (InN) is a binary III-V semiconductor compound characterized by a direct bandgap in the near-infrared to visible spectrum region. It belongs to the nitride semiconductor family and is primarily investigated for optoelectronic and high-frequency electronic applications, though it remains largely in the research and development phase compared to more mature III-V semiconductors like GaN and InGaAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,313.5 | ksi | — | ||
Shear Modulus(G) | 7,808.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8317 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.00900 | eV/atom | — |