In2 I10 Pb4
semiconductorIn₂I₁₀Pb₄ is an inorganic semiconductor compound combining indium, iodine, and lead — a mixed-halide perovskite-related material currently in active research rather than established industrial production. This compound family is being investigated for optoelectronic applications including photovoltaics, X-ray detection, and radiation sensing, where lead and indium halides offer potential advantages in bandgap engineering and charge transport compared to single-element alternatives. The material is notable for its layered or hybrid crystal structure, which can provide stability improvements over classical lead halide perovskites while maintaining semiconducting properties useful for next-generation detector and energy conversion devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |