In2 Ge1 B1

semiconductor

· In2 Ge1 B1

In₂GeB is a quaternary semiconductor compound combining indium, germanium, and boron elements, representing an experimental material in the III-V semiconductor family. This compound is primarily of research interest for exploring novel band structure properties and potential optoelectronic or high-frequency applications, though it remains largely in the development phase without established commercial production or widespread industrial deployment.

experimental semiconductorsoptoelectronic devices (research)high-frequency electronics (development)wide bandgap applicationsmaterials science researchcompound semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00210	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9070	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 Ge1 B1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control