In2 Ga2 O6

semiconductor

· In2 Ga2 O6

In₂Ga₂O₆ is a mixed-cation oxide semiconductor combining indium and gallium oxides, belonging to the family of wide-bandgap semiconductor materials. This compound is primarily of research and development interest for next-generation optoelectronic and power electronic devices, where its dual-cation structure offers potential for tuning electronic properties between those of In₂O₃ and Ga₂O₃. Applications under investigation include transparent conducting oxides, UV photodetectors, and high-voltage power switches where the wide bandgap and structural stability provide advantages over single-cation alternatives in specific performance windows.

UV photodetectorsTransparent conducting electrodesHigh-voltage power devicesWide-bandgap semiconductorsOptoelectronic researchNext-generation transistors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	177.9	GPa	—
Shear Modulus(G)	75.97	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.584	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.866	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 Ga2 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control