In2 Fe2 O6

semiconductor

· In2 Fe2 O6

In₂Fe₂O₆ is an iron indium oxide ceramic compound belonging to the family of mixed-metal oxides, typically investigated as a semiconductor material in research contexts. This compound is studied primarily for optoelectronic and sensing applications due to its bandgap properties and potential for thin-film device fabrication. While not yet widely deployed in mainstream commercial products, materials in this class are of interest to researchers developing next-generation photodetectors, gas sensors, and transparent conductive coatings where conventional semiconductors face limitations.

optoelectronic devicesgas sensingthin-film transistorsresearch semiconductorsphotocatalysistransparent electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03520	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.503	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 Fe2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control