In₂Au₂O₄ is an indium gold oxide semiconductor compound that combines indium and gold metalloids in an oxidized matrix, forming a mixed-metal oxide system. This material is primarily of research interest for advanced optoelectronic and photocatalytic applications, where the synergistic properties of indium and gold oxides enable enhanced light absorption and charge carrier dynamics compared to single-metal oxide alternatives. Engineering interest centers on transparent conductive coatings, photocatalytic water splitting, and next-generation sensor technologies, though industrial adoption remains limited as the material class is still under active development.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,551.1 | ksi | — | ||
Shear Modulus(G) | 5,865.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3991 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.101 | eV/atom | — |