In₂Ag₂P₄Se₁₂ is a quaternary semiconductor compound combining indium, silver, phosphorus, and selenium in a layered crystal structure. This is a research-stage material belonging to the family of complex chalcogenide semiconductors, developed for potential applications requiring moderate mechanical stiffness combined with semiconducting properties. The material is not yet established in mainstream industrial production but represents the broader class of multinary semiconductors being investigated for photovoltaic, thermoelectric, and optoelectronic device applications where tunable bandgaps and mixed-metal cation strategies offer advantages over binary or simple ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 31.47 | GPa | — | ||
Shear Modulus(G) | 16.24 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2843 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2040 | eV/atom | — |