In₂Ag₂P₄S₁₂ is a quaternary semiconductor compound combining indium, silver, phosphorus, and sulfur, belonging to the family of complex metal phosphide sulfides. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its layered crystal structure and tunable bandgap could enable efficient light absorption or emission. It represents an emerging class of materials being investigated as an alternative to conventional semiconductors for specialized applications requiring tailored electronic or optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.60 | GPa | — | ||
Shear Modulus(G) | 18.98 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9792 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3570 | eV/atom | — |