In₂Ag₂O₄ is an indium–silver oxide semiconductor compound, representing a mixed-metal oxide in the quaternary oxide family. This material is primarily of research interest for optoelectronic and photocatalytic applications, where its semiconductor properties enable light absorption and charge carrier generation. The indium–silver combination offers potential advantages in photocatalysis, gas sensing, and possibly transparent conducting oxide applications, though it remains largely experimental compared to established semiconductors like indium tin oxide (ITO) or traditional silicon-based devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,581.8 | ksi | — | ||
Shear Modulus(G) | 5,971.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5424 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.171 | eV/atom | — |