In₂Ag₁Se₄ is a quaternary semiconductor compound combining indium, silver, and selenium in a layered crystal structure. This material belongs to the family of I-III-VI₂ and related ternary/quaternary semiconductors, primarily investigated in research contexts for optoelectronic and thermoelectric applications where tunable bandgap and mixed-metal compositions offer potential advantages over binary or simpler ternary counterparts. Engineers and materials researchers consider this compound for niche applications requiring specific electronic properties, photosensitivity, or thermal management in environments where conventional semiconductors (Si, GaAs) are unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,473.5 | ksi | — | ||
Shear Modulus(G) | 1,349.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02810 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3300 | eV/atom | — |