In1Sb0.9As0.1

semiconductor

· In1Sb0.9As0.1

InSbAs is a ternary III-V semiconductor alloy combining indium antimonide (InSb) with a small arsenic substitution (10% As, 90% Sb). This material belongs to the narrow-bandgap semiconductor family and is primarily of research and specialized device interest rather than high-volume production. InSbAs alloys are investigated for infrared detection, particularly in the mid-wave infrared (MWIR) region, where the arsenic doping modifies the bandgap and lattice parameter of InSb to improve performance in specific detector designs and thermal imaging applications.

infrared detectorsthermal imaging sensorsmid-wave IR applicationsnarrow-bandgap semiconductorsresearch/specialized optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2700	eV	—

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Regulatory Screening

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In1Sb0.9As0.1

Electrical Properties

Regulatory Screening

Environmental

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