In1Sb0.99As0.01

semiconductor

· In1Sb0.99As0.01

In₁Sb₀.₉₉As₀.₀₁ is a narrow-bandgap III-V semiconductor alloy based on indium antimonide (InSb) with a small arsenic substitution on the antimony sublattice. This material belongs to the indium compound semiconductor family and represents a deliberate bandgap engineering approach to tune the electronic properties of InSb for specific infrared and optoelectronic applications. The arsenic doping modifies carrier concentration and energy band structure compared to pure InSb, making it relevant for mid-infrared detection, high-mobility transistor channels, and magnetoresistive sensor devices where precise bandgap control is critical.

infrared detectorsmid-IR photodiodeshigh-mobility transistorsmagnetoresistive sensorscryogenic electronicsbandgap engineering research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3500	eV	—

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Regulatory Screening

Environmental

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In1Sb0.99As0.01

Electrical Properties

Regulatory Screening

Environmental

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