In1Sb0.8As0.2

semiconductor

· In1Sb0.8As0.2

In₁Sb₀.₈As₀.₂ is a ternary III-V semiconductor alloy combining indium, antimony, and arsenic in a zinc-blende crystal structure. This material belongs to the InSbAs family and is primarily investigated for infrared optoelectronic and high-speed electronic devices where the bandgap and lattice parameters can be tuned between those of InSb and InAs end-members. Engineering interest centers on mid-to-long-wavelength infrared detection, narrow-bandgap transistors, and quantum-effect devices, where this composition offers potential advantages in thermal sensitivity and carrier mobility compared to more conventional alternatives like InGaAs or HgCdTe.

infrared photodetectorsthermal imaging sensorshigh-electron-mobility transistorsquantum well structuresnarrow-bandgap semiconductorsresearch-phase optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.8As0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control