In1Sb0.7As0.3

semiconductor

· In1Sb0.7As0.3

In₁Sb₀.₇As₀.₃ is a ternary III-V semiconductor alloy combining indium, antimony, and arsenic, belonging to the narrow-bandgap semiconductor family. This material is primarily of research and specialized device interest, exploited for infrared detection and thermal imaging applications where its bandgap energy falls in the mid-to-long wavelength infrared region. It offers potential advantages over binary InSb or InAs in tuning bandgap and lattice properties for specific detector wavelengths, though adoption remains limited compared to mature quaternary alloys like InGaAs.

infrared detectorsthermal imaging sensorsresearch semiconductorsbandgap engineeringcryogenic optoelectronicsmilitary/aerospace sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.7As0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control