In1Sb0.6As0.4

semiconductor

· In1Sb0.6As0.4

In₁Sb₀.₆As₀.₄ is a ternary III-V semiconductor alloy combining indium, antimony, and arsenic in a direct bandgap structure. This material is engineered primarily for infrared optoelectronic devices where its bandgap energy falls in the mid-to-long wavelength infrared region, making it valuable for thermal imaging, gas sensing, and infrared detectors that operate at cryogenic or thermoelectric cooling temperatures. Compared to binary compounds like InSb or InAs, this ternary composition offers tunable bandgap wavelength and improved lattice matching for heterostructure designs, positioning it as a key material for research in advanced infrared focal plane arrays and quantum infrared sensors.

infrared detectorsthermal imaging sensorsgas sensingquantum well structurescryogenic optoelectronicsfocal plane arrays

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1300	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.6As0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control