In1Sb0.3As0.7

semiconductor

· In1Sb0.3As0.7

In₁Sb₀.₃As₀.₇ is a ternary III-V semiconductor alloy combining indium, antimony, and arsenic in a zinc-blende crystal structure. This material represents a composition point within the indium antimonide-indium arsenide solid solution system, engineered to achieve intermediate bandgap and lattice parameters between its binary end-members. The alloy is primarily investigated for infrared optoelectronics and high-speed electronic devices where tuning the bandgap between that of InSb (~0.17 eV) and InAs (~0.35 eV) offers performance advantages; it is notably used or studied for mid-infrared photodetectors, thermal imaging sensors, and high-electron-mobility transistors (HEMTs) operating in the 3–12 µm wavelength range.

infrared detectors and sensorsthermal imaging systemshigh-speed transistorsoptoelectronic devicesbandgap engineeringIII-V semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.3As0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control