In1Sb0.2As0.8

semiconductor

· In1Sb0.2As0.8

In₁Sb₀.₂As₀.₈ is a ternary III-V semiconductor alloy combining indium, antimony, and arsenic in a zinc-blende crystal structure. This material belongs to the InAs-InSb solid solution family and is primarily investigated for infrared optoelectronic and photodetection applications where its narrow bandgap and high carrier mobility offer advantages over binary compounds. The specific composition positions it in a research-driven space for tuning the bandgap energy to target mid-to-long wavelength infrared detection (MWIR/LWIR), making it notable for thermal imaging and sensing systems where performance tailoring across the infrared spectrum is critical.

infrared photodetectorsthermal imaging sensorsmid-wave infrared detectionoptoelectronic devicesnarrow-bandgap semiconductorsresearch/development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.2As0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control