In1Sb0.1As0.9

semiconductor

· In1Sb0.1As0.9

In₁Sb₀.₁As₀.₉ is a narrow-bandgap III-V semiconductor alloy composed of indium antimonide and indium arsenide, belonging to the InSb-InAs pseudobinary system. This material is primarily developed for infrared optoelectronics and mid-to-long-wavelength detection applications, where its tunable bandgap and high carrier mobility make it suitable for thermal imaging and spectroscopic sensing in the 3–5 μm wavelength range. The composition represents a research-phase material designed to optimize performance for specific IR detector architectures where the balance of InSb's narrow bandgap and InAs's higher electron mobility offers advantages over single-component alternatives.

infrared detectorsthermal imaging sensorsmid-wavelength IR detectionoptoelectronic devicesspace-borne sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1400	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.1As0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control